Herein, the results that determine some conditions for increasing the radiation hardness of ⁶⁰Co gamma or 1 MeV electron-irradiated tin-doped n-type Czochralski silicon (Cz n-Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low-resistivity Cz n-Si with P doping levels >5 × 10¹⁴ cm⁻³ containing in addition [Sn] ≈10¹⁷–10¹⁹ cm⁻³ has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn-free n-Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low-resistivity Cz n-Si:Sn.

中文翻译：

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60Co Gamma 和 1 MeV 电子辐照锡掺杂 n 型直拉硅中的载流子寿命：提高辐射硬度的条件

在此，给出了确定用于提高⁶⁰ Co γ 或 1 MeV 电子辐照锡掺杂 n 型直拉硅 (Cz n-Si:Sn)的辐射硬度的一些条件的结果。这些条件是通过分析主要辐射缺陷（即 VO 和 SnV 复合物）的形成动力学以及电荷载流子通过具有不同磷和锡浓度的样品中这些缺陷的电子能级的重组来确定的。结果表明，P 掺杂水平 >5 × 10 ¹⁴  cm ^{-3 的}低电阻率 Cz n-Si 还含有 [Sn] ≈10 ¹⁷ –10 ¹⁹  cm ^-3具有辐射硬化潜力。在这种材料中，载流子寿命的辐射退化比不含 Sn 的 n-Si 小几倍，而两种材料的电导率补偿都可以忽略不计。寿命退化率的降低是由于低电阻率 Cz n-Si:Sn 中 VO 浓度的降低。