Copper oxide thin films have prepared by sputtering technique. Silicon intercalated copper oxide thin films as a dopant with a ratio ranged from 2.1 to 6.2 at%. The thickness of the prepared films decreased as Si dopant increase from 153 nm for the base CuO films to 54 nm for the 6.2 at% Si containing samples. Copper atoms are presented in divalent states, whereas silicon dopant existed as a major Si–O and minor metallic Si states. X-ray photoelectron spectroscopy (XPS) proved the chemical state of CuO, while the X-ray diffraction (XRD) approved the monoclinic crystal structure. The average crystallite size values decreased as the Si content increase from 164 to 124 Å. The surface morphology and roughness were examined by Atomic Force Microscopy (AFM). The existence of Si content in CuO lattice improved the morphology by reducing the grain size and surface roughness. The optical properties of studied films showed the dependence of optical band gap and static refractive index on the Si content. With the increase in Si content, the optical transition decreased from 2.18 to 1.88 eV. Moreover, the optical dispersion parameters were determined and discussed in terms of Wemple-DiDomenico model. The films are suggested to use as transparent semiconducting materials.

氧化铜薄膜已通过溅射技术制备。硅嵌入氧化铜薄膜作为掺杂剂，其比例范围为 2.1 至 6.2 at%。随着 Si 掺杂剂从基底 CuO 膜的 153 nm 增加到含 6.2 at% Si 的样品的 54 nm，制备的膜的厚度减小。铜原子以二价态存在，而硅掺杂剂以主要 Si-O 和次要金属 Si 态存在。X 射线光电子能谱 (XPS) 证实了 CuO 的化学状态，而 X 射线衍射 (XRD) 证实了单斜晶体结构。随着硅含量从 164 增加到 124 埃，平均晶粒尺寸值减小。通过原子力显微镜（AFM）检查表面形态和粗糙度。CuO晶格中Si含量的存在通过降低晶粒尺寸和表面粗糙度来改善形态。研究薄膜的光学性质表明光学带隙和静态折射率对 Si 含量的依赖性。随着 Si 含量的增加，光跃迁从 2.18 eV 降低到 1.88 eV。此外，根据 Wemple-DiDomenico 模型确定和讨论了光色散参数。建议将薄膜用作透明半导体材料。根据 Wemple-DiDomenico 模型确定和讨论了光色散参数。建议将薄膜用作透明半导体材料。根据 Wemple-DiDomenico 模型确定和讨论了光色散参数。建议将薄膜用作透明半导体材料。