Herein, we represent the fabrication of self-biased visible-blind UV photodetector based on thermally deposited N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) film over n-type silicon substrate giving rise to the structure Au/TPD/n-Si/Al heterojunction. The microelectronic parameters of the fabricated heterojunction Au/TPD/n-Si/Al as well as the charge carriers' transport mechanisms in forward and reverse bias conditions are analyzed and interpreted in detail under the dark conditions and the influence of temperature. The manufactured photodetector showed a significant response to UV illumination with high photocurrents and noticeable values of open-circuit voltage. The fabricated UV photodetector under self-biasing and illumination intensity (100 mW/cm²) records values of responsivity, specific detectivity, linear dynamic range, signal to noise ratio, the response time, and ON/OFF ratio equals 147 mA/W, 6.4 × 10¹⁰ Jones, 58.69 dB, 945.5, 82/80 ms, and 861.98, respectively. This high, stable, and fast performance of the fabricated sensor suggest this architecture as an efficient integrated platform for self-biased UV photodetection.

在这里，我们代表了基于热沉积 N,N'-双（3-甲基苯基）-N,N'-二苯基联苯胺（TPD）薄膜在n型硅衬底上制造自偏置可见盲紫外光电探测器，从而产生结构 Au/TPD/ n -Si/Al 异质结。制备的异质结 Au/TPD/ n的微电子参数-Si/Al 以及电荷载体在正向和反向偏置条件下的传输机制在黑暗条件和温度影响下进行了详细分析和解释。制造的光电探测器显示出对紫外线照射的显着响应，具有高光电流和显着的开路电压值。在自偏置和光照强度 (100 mW/cm ² )下制造的紫外光电探测器记录了响应度、比检测率、线性动态范围、信噪比、响应时间和开/关比等于 147 mA/W 的值， 6.4 × 10 ¹⁰Jones，分别为 58.69 dB、945.5、82/80 ms 和 861.98。所制造传感器的这种高、稳定和快速的性能表明这种架构是一个有效的自偏置紫外光电检测集成平台。