Polycrystalline monolayer graphene films grown by chemical vapor deposition were exposed to a low-pressure inductively coupled plasma operated in a gaseous mixture of argon and diborane. Optical emission spectroscopy and plasma sampling mass spectrometry reveal high B₂H₆ fragmentation leading to significant populations of both boron and hydrogen species in the gas phase. X-ray photoelectron spectroscopy indicates the formation of a boron-containing layer at the surface and provides evidence of a substitutional incorporation of boron atoms within the graphene lattice. Graphene doping by graphitic boration is confirmed by hyperspectral Raman imaging of graphene domains. These results demonstrate that diborane-containing plasmas are efficient tools for boron substitutional incorporation in graphene with minimal domain hydrogenation.

中文翻译：

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低压乙硼烷-氩等离子体对单层石墨烯薄膜的后生长改性

通过化学气相沉积生长的多晶单层石墨烯薄膜暴露于在氩气和乙硼烷的气体混合物中操作的低压电感耦合等离子体。发射光谱和等离子体采样质谱显示高 B ₂ H ₆碎裂导致气相中大量的硼和氢物种。X 射线光电子能谱表明在表面形成了含硼层，并提供了硼原子在石墨烯晶格内置换结合的证据。通过石墨烯域的高光谱拉曼成像证实了石墨硼化的石墨烯掺杂。这些结果表明，含乙硼烷的等离子体是硼置换掺入石墨烯的有效工具，且域氢化最少。