The behavior and functionality of semiconductor heterojunctions depend critically on the alignments of the valence and conduction bands at the various interfaces. Traditionally, band alignment has been measured by x-ray photoelectron spectroscopy using pairs of distinct core levels, one from each side of the interface, to track the valence band maxima in the two materials. Here, we demonstrate that band alignment across an interface can also be determined using a single core-level photoelectron spectrum for an element that is common to both materials. The energy splitting between the photoemission features originating in the two materials is shown to be dominated by the difference in electrostatic potential across the interface, thereby leading to a reliable determination of the band alignment.

中文翻译：

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使用单个核心级 X 射线光电子能谱确定异质结中的价带偏移

半导体异质结的行为和功能主要取决于不同界面处价带和导带的排列。传统上，能带排列是通过 X 射线光电子能谱使用成对的不同核心能级（界面的每一侧一个）来测量的，以跟踪两种材料中的价带最大值。在这里，我们证明了跨界面的带对齐也可以使用单个核心级光电子光谱来确定，该元素对两种材料都是通用的。来自两种材料的光电发射特征之间的能量分裂显示出由界面上的静电势差异支配，从而导致对带对齐的可靠确定。