In this work, the influence of Pb content (x = 1.0, 1.05, 1.1, and 1.2) in a 0.02M Pb_xTiO₃ (P_xT) seed layer on {100}-texture percentage and electrical properties of Pb_1.1(Zr_0.52,Ti_0.48)O₃ (PZT) films was investigated. The 0.02M concentration of the P_xT seed layer chosen for the present work was based on our previous work on the optimization of solution concentration (0.02, 0.05, 0.1, and 0.2M) of the P_xT seed layer on the texture percentage of 190 nm PZT thin films. The chemical solution deposition method was used to deposit 1.3 μm thick PZT films on Pt (111)/TiO₂/SiO₂/Si substrates. X-ray diffraction studies demonstrated the dependence of {100}-texture percentage (TP) and grain size of PZT films on Pb content in the P_xT seed layer. TP was observed to affect the dielectric and ferroelectric properties of these films. PZT films grown on the P_1.05T seed layer showed a maximum value for both TP (97%) and peak height. Piezoelectric measurements were performed using cantilevers prepared with Pt top and bottom electrodes. PZT films grown on the P_1.05T seed layer showed a maximum transverse piezoelectric coefficient of −13.3 C/m². Current studies, coupled with our previous work, suggest that the use of a seed layer P_xT and the optimization of Pb content in the seed layer are promising routes to achieve {100}-textured PZT films with higher piezoelectric parameters.

中文翻译：

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{100}-纹理压电Pb(Zr,Ti)O3薄膜：PbxTiO3种子层中Pb含量对化学溶液沉积Pb(Zr,Ti)O3电性能的影响

在这项工作中，0.02M Pb _x TiO ₃ (P _x T) 种子层中的 Pb 含量（x = 1.0、1.05、1.1 和 1.2）对 Pb _{1.1 的}{100}-织构百分比和电性能的影响（研究了 Zr _0.52、Ti _0.48 )O ₃ (PZT) 薄膜。在P的0.02M浓度_X是基于我们的先前关于P的溶液浓度（0.02，0.05，0.1，0.2M）的优化工作选择用于本工作Ť种子层_X上的纹理百分比Ť籽晶层190 nm PZT 薄膜。用来沉积1.3化学溶液沉积方法 μ M于厚的Pt PZT膜的（111）/的TiO ₂/SiO ₂ /Si衬底。X 射线衍射研究证明了 PZT 薄膜的 {100}-织构百分比 (TP) 和晶粒尺寸对 P _x T 种子层中Pb 含量的依赖性。观察到 TP 会影响这些薄膜的介电和铁电性能。在 P _1.05 T 种子层上生长的 PZT 薄膜显示出 TP (97%) 和峰高的最大值。使用由 Pt 顶部和底部电极制备的悬臂进行压电测量。在 P _1.05 T 籽晶层上生长的 PZT 薄膜显示出最大横向压电系数为 -13.3 C/m ²。当前的研究，加上我们之前的工作，表明使用种子层 P _xT 和种子层中 Pb 含量的优化是获得具有更高压电参数的 {100} 纹理 PZT 薄膜的有希望的途径。