The potential of area-selective deposition (ASD) with a newly developed chemical vapor deposition (CVD) method, which utilizes plasma electrons as reducing agents for deposition of metal-containing films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane, polymethylmethacrylate, polystyrene, parafilm, Kapton tape, Scotch tape, and office paper. The masking materials were all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the films deposited consist mainly of iron, whereas no film material is found on the masked areas after mask removal. Scanning electron microscopy analysis of films deposited with nonadhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as reducing agents is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area-selective metal-on-metal deposition.

中文翻译：

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使用温度敏感的掩蔽材料和等离子体电子作为还原剂的铁膜的区域选择性沉积

区域选择性沉积 (ASD) 和新开发的化学气相沉积 (CVD) 方法的潜力，该方法利用等离子体电子作为还原剂来沉积含金属的薄膜，使用温度敏感的聚合物基掩蔽材料进行了证明。测试的掩蔽材料是聚二甲基硅氧烷、聚甲基丙烯酸甲酯、聚苯乙烯、封口膜、聚酰亚胺胶带、透明胶带和办公用纸。掩蔽材料都被证明可以防止在基板的掩蔽区域上的薄膜生长，而不受薄膜沉积工艺的影响。X 射线光电子能谱分析证实沉积的薄膜主要由铁组成，而在去除掩模后的掩模区域上没有发现薄膜材料。使用非粘性掩蔽材料沉积的薄膜的扫描电子显微镜分析表明，薄膜生长在掩蔽材料下方延伸了一小段距离，表明以等离子体电子作为还原剂的 CVD 工艺不是一种视线沉积技术。所报告的方法为 ASD 引入了一种廉价且直接的方法，为稳健且不太复杂的区域选择性金属对金属沉积开辟了令人兴奋的新可能性。