We present a study of the impeding influence of a capping, native oxide layer on the solid state dewetting of thin bismuth films on silicon(111) in vacuum. We study the temperature dependence of the film thickness and strain of the thin films through the analysis of crystal truncation rods of clean and capped bismuth films. This analysis reveals a dewetting temperature difference of $40{}^{°}\mathrm{C}$ between capped and uncapped films. The results are supported by scanning electron microscopy and x-ray photoelectron spectroscopy experiments. Furthermore, a model for the retarding effect of the oxide layer and the final shape of the thin film is presented.

中文翻译：

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具有氧化物覆盖层的铋薄膜的延迟固态去湿

我们研究了封盖的天然氧化物层对真空中硅（111）上的薄铋膜的固态去湿的阻碍影响。我们通过分析清洁和加帽铋膜的晶体截断棒来研究薄膜厚度和应变的温度依赖性。该分析揭示了去湿温差为$40{}^{°}\mathrm{C}$封盖和未封盖的薄膜之间。结果得到了扫描电子显微镜和 X 射线光电子能谱实验的支持。此外，还提出了氧化层延迟效应和薄膜最终形状的模型。