This paper reports two specific aspects of Si implantation in the molecular beam epitaxy grown p-type GaSb epilayer, namely, the evolution of nanoporosity and doping characteristics. The implantation is done with 100 keV Si ions at four different fluences, i.e., 5 × 10¹³, 1 × 10¹⁴, 5 × 10¹⁴, and 1 × 10¹⁵ions/cm². A field-emission scanning electron microscope (in-plane and cross-sectional view) shows a smooth nanoporous GaSb with a pore diameter of 10–20 nm for the higher fluences. The thickness of the porous film is enhanced from 235 nm (fluence: 1 × 10¹⁴ions/cm²) to 515 nm (fluence: 1 × 10¹⁵ions/ cm²). Development of smooth uniform porous GaSb using Si ion implantation is discussed from the viewpoint of displacement per atom and distribution of vacancies estimated through Stopping and Range of Ions in Matter simulation tool. Hall measurement shows conversion to n-type behavior after implantation and a variation in the sheet carrier concentration from 2.22 × 10¹⁴ to 8.52 × 10¹⁴ cm⁻². There is a drastic change in the mobility with the onset of void formation by implantation.

中文翻译：

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分子束外延生长的 GaSb 外延膜中的硅离子注入诱导掺杂和纳米孔隙率

本文报道了分子束外延生长的 p 型 GaSb 外延层中 Si 注入的两个具体方面，即纳米孔隙率和掺杂特性的演变。以四种不同的通量，即5×10 ¹³、1×10 ¹⁴、5×10 ¹⁴和1×10 ¹⁵离子/cm ²用100 keV Si离子进行注入。场发射扫描电子显微镜（平面和横截面视图）显示了具有 10-20 nm 孔径的光滑纳米多孔 GaSb，用于更高的能量密度。多孔膜的厚度从235 nm（注量：1 × 10 ¹⁴ ions/cm ²）增加到515 nm（注量：1 × 10 ¹⁵ ions/cm ²）。从每个原子的位移和通过物质中离子的停止和范围模拟工具估计的空位分布的角度讨论了使用 Si 离子注入开发光滑均匀的多孔 GaSb。霍尔测量显示在注入之后转换为 n 型行为，并且片载流子浓度从 2.22 × 10 ^{14 变化}到 8.52 × 10 ¹⁴  cm ^-2。随着注入开始形成空隙，迁移率发生了剧烈变化。