Thin films of the inorganic halide perovskite, CsPbBr₃, find applications in various optoelectronic devices, including solar cells, radiation detectors, light-emitting diodes, photodetectors, and lasers. Physical vapor deposition (PVD) by coevaporation of CsBr and PbBr₂ onto a substrate is a scalable solventless approach to forming high purity large-grained polycrystalline films. Herein, we investigate the effects of deposition temperature, between 26 and 162 °C, and postdeposition annealing, between 250 and 350 °C, on the structure, texturing, and morphology of orthorhombic CsPbBr₃ films formed by PVD. All films, regardless of the stable phase at the deposition temperature, transform to orthorhombic upon cooling to room temperature. The films deposited as orthorhombic or tetragonal CsPbBr₃ below 130 °C were textured in the orthorhombic structure's ⟨202⟩ direction, while cubic CsPbBr₃ films deposited above 130 °C were textured in the orthorhombic structure's ⟨121⟩ direction. This texturing favors the growth of high cation density planes of the stable phase at the deposition temperature. The orthorhombic ⟨202⟩ texturing also dominates after annealing as long as the films have ⟨202⟩ aligned grains before annealing.

中文翻译：

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通过蒸发 CsBr 和 PbBr2 气相沉积 CsPbBr3 薄膜

无机卤化物钙钛矿薄膜 CsPbBr _{3 可}用于各种光电器件，包括太阳能电池、辐射探测器、发光二极管、光电探测器和激光器。通过将 CsBr 和 PbBr ₂共蒸发到基材上的物理气相沉积 (PVD)是一种可扩展的无溶剂方法，可用于形成高纯度大晶粒多晶薄膜。在此，我们研究了 26 至 162 °C 的沉积温度和 250 至 350 °C 的沉积后退火对正交晶系 CsPbBr ₃的结构、织构和形态的影响PVD形成的薄膜。无论沉积温度下的稳定相如何，所有薄膜在冷却至室温后都会转变为正交晶系。在130°C以下沉积为正交或四方CsPbBr ₃的薄膜在正交结构的⟨202⟩方向上织构，而在130°C以上沉积的立方CsPbBr ₃薄膜在正交结构的⟨121⟩方向上织构。这种织构有利于在沉积温度下稳定相的高阳离子密度平面的生长。只要薄膜在退火前具有 ⟨202⟩ 排列的晶粒，正交 ⟨202⟩ 织构在退火后也占主导地位。