Rare-earth elements are widely used as doping materials as they considerably change the semiconductor optical, electrical, magnetic and radiative properties. This work explores the influence of Gadolinium (Gd) as a dopant on the radiative, optical and magnetic properties of the Zinc Selenide (ZnSe). ZnSe single crystals were grown by the physical transport method and doped during the growth process using a GdSe source. A wide range of characterization equipment was employed to analyze the obtained ZnSe:Gd single crystals. Intracenter radiative transition of the Gd has not been detected. Gd ions activate the background impurities, causing radiative transitions from the conduction band to the Cu²⁺ level and intracenter transitions within V³⁺, V²⁺ and Cr²⁺ ions. At the same time, the edge band intensity is dependent on the dopant concentration. Optical transmittance decreases, but the position of the fundamental absorption band is unchanged. Single crystals have a zinc blende crystal structure, and Gd ions do not form complexes with native defects or background impurities.

稀土元素被广泛用作掺杂材料，因为它们显着改变了半导体的光、电、磁和辐射特性。这项工作探索了钆 (Gd) 作为掺杂剂对硒化锌 (ZnSe) 的辐射、光学和磁性能的影响。ZnSe 单晶通过物理传输方法生长，并在生长过程中使用 GdSe 源进行掺杂。使用多种表征设备来分析获得的 ZnSe:Gd 单晶。尚未检测到 Gd 的中心辐射跃迁。Gd 离子激活背景杂质，导致从导带到 Cu ²⁺能级的辐射跃迁以及 V ³⁺、V ²⁺和 Cr内的中心跃迁²⁺离子。同时，边缘带强度取决于掺杂剂浓度。光透射率降低，但基波吸收带的位置不变。单晶具有闪锌矿晶体结构，Gd 离子不会与天然缺陷或背景杂质形成复合物。