In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO 3 )-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is -45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/μs. The simultaneous low-loss and high power handling illustrate the great potential of LiNbO 3 -on-sapphire for RF and cross domain applications at gigahertz.

中文翻译：

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使用薄膜蓝宝石上铌酸锂的千兆赫兹低损耗和高功率处理声学延迟线


在这项工作中，我们展示了第一组使用蓝宝石平台上的薄膜铌酸锂 (LiNbO 3 ) 平台的千兆赫兹低损耗、宽带和高功率处理延迟线 (ADL)。 ADL 利用单相单向换能器 (SPUDT) 有效地激发薄膜叠层中的剪切水平表面声波 (SH-SAW)。所制造的微型 SH-SAW ADL 在 1.1 GHz 下表现出 2.8 dB 的低插入损耗 (IL)、6.14% 的宽分数带宽 (FBW) 以及 5127 m/s 的快相速度。该器件还具有 30.4 dBm 的高 1 dB 压缩点 (P1dB)。频率温度系数为-45 ppm/K。已实现延迟在 12 至 172 ns 之间的 ADL，IL 在 2.8 至 8.3 dB 之间。提取SH-SAW传播特性，显示群速度为4747 m/s，传播损耗为6.73 dB/mm或31.9 dB/μs。同时实现的低损耗和高功率处理能力说明了蓝宝石上LiNbO 3 在千兆赫射频和跨域应用中的巨大潜力。