This article presents an analytical design for millimeter-wave monolithic microwave integrated circuit (MMIC) switches. First, the field-effect-transistor-based (FET-based) resonator is proposed, whose resonant frequency and bandwidth can be controlled flexibly. As a result, the design flexibility of MMIC switches can be highly improved by using FET-based resonators. Second, a fast and flexible impedance matching technique is presented for MMIC switches based on the coupling matrix method. By selecting appropriate coupling parameters, the MMIC switches can be easily designed without designing multistage impedance matching circuits. In this way, low insertion loss (IL) and compact chip size can be accordingly obtained. For design validation, two single-pole single-throw (SPST) switch prototypes are designed and fabricated by using two or four FET-based resonators, respectively. Implemented in 100-nm GaN-on-Silicon HEMT process, high input 1-dB compression point (IP 1 dB ) of over 30 dBm is realized. The return losses are better than 15 dB, the minimum IL is only 1.1 dB at 30 GHz, and the isolations are higher than 45 dB. The above features indicate the validation of the proposed design method for MMIC switches.

中文翻译：

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使用基于 FET 的谐振器和耦合矩阵方法进行毫米波 100 nm GaN-on-Si MMIC 开关的分析设计


本文介绍了毫米波单片微波集成电路 (MMIC) 开关的分析设计。首先，提出了基于场效应晶体管（FET）的谐振器，其谐振频率和带宽可以灵活控制。因此，通过使用基于 FET 的谐振器可以大大提高 MMIC 开关的设计灵活性。其次，提出了一种基于耦合矩阵方法的快速、灵活的MMIC开关阻抗匹配技术。通过选择合适的耦合参数，可以轻松设计MMIC开关，而无需设计多级阻抗匹配电路。以此方式，可以相应地获得低插入损耗(IL)和紧凑的芯片尺寸。为了进行设计验证，分别使用两个或四个基于 FET 的谐振器设计和制造了两个单刀单掷 (SPST) 开关原型。采用 100 nm 硅基 GaN HEMT 工艺实现，实现了超过 30 dBm 的高输入 1 dB 压缩点 (IP 1 dB )。回波损耗优于 15 dB，30 GHz 时最小 IL 仅 1.1 dB，隔离度高于 45 dB。上述特征表明所提出的 MMIC 开关设计方法得到了验证。