This article presents the analysis and design of a Class- EM/Fn\text{E}_{\mathrm {M}}/\text{F}_{\mathrm {n}} power amplifier (PA). The high peak switch voltage factor of the classical Class- EM\text{E}_{\mathrm {M}} PA is reduced by 27.3% through the adoption of the Class- F−1\text{F}^{-1} third-harmonic termination on the main circuit, resulting in a novel topology called the Class- EM/Fn\text{E}_{\mathrm {M}}/\text{F}_{\mathrm {n}} . The adoption of a finite dc-feed inductance enables the introduction of the design parameter kk , which can be exploited to extend the maximum operating frequency of the PA. The idealized voltage and current waveforms of the PA show that the main circuit fulfills not only zero voltage switching (ZVS) and zero voltage derivative switching (ZVDS) conditions as in the Class-E but also zero-current switching (ZCS) and zero-current derivative switching (ZCDS) conditions as in the Class- E−1\text{E}^{-1} , thus minimizing power dissipation during OFF-to-ON and ON-to-OFF transitions. The load-network parameters of the main and auxiliary circuits are derived, and harmonic-balance simulations are performed to confirm the analytical results. A Class- EM/F3,5\text{E}_{\mathrm {M}}/\text{F}_{3,5} PA employing a transmission-line load network was designed and implemented using GaN HEMTs. The constructed Class- EM/F3,5\text{E}_{\mathrm {M}}/\text{F}_{3,5} PA delivered a drain efficiency of 83%, a power-added efficiency of 76%, and an output power of 42.3 dBm at 1.8 GHz.

中文翻译：

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具有有限直流馈电电感和隔离电路的谐波注入类 EM/Fn 功率放大器


本文介绍了 EM/Fn\text{E}_{\mathrm {M}}/\text{F}_{\mathrm {n}} 功率放大器 (PA) 的分析和设计。通过采用 Class- F−1\text{F}^{-1，经典 Class- EM\text{E}_{\mathrm {M}} PA 的高峰值开关电压因数降低了 27.3%主电路上的三次谐波终止，产生了一种称为 Class- EM/Fn\text{E}_{\mathrm {M}}/\text{F}_{\mathrm {n}} 的新颖拓扑。采用有限直流馈电电感可以引入设计参数 kk ，可利用该参数来扩展 PA 的最大工作频率。 PA 的理想电压和电流波形表明，主电路不仅满足 E 类中的零电压开关 (ZVS) 和零电压导数开关 (ZVDS) 条件，而且还满足零电流开关 (ZCS) 和零电流开关 (ZCS) 条件。电流导数开关 (ZCDS) 条件与 Class- E−1\text{E}^{-1} 中一样，从而最大限度地减少关到开和开到关转换期间的功耗。推导出主电路和辅助电路的负载网络参数，并进行谐波平衡仿真以确认分析结果。使用 GaN HEMT 设计并实现了采用传输线负载网络的 EM/F3,5\text{E}_{\mathrm {M}}/\text{F}_{3,5} 类 PA。构建的 Class- EM/F3,5\text{E}_{\mathrm {M}}/\text{F}_{3,5} PA 的漏极效率为 83%，功率附加效率为 76 %，1.8 GHz 时输出功率为 42.3 dBm。