A novel CMOS-compatible SiGe Tunnel Field-Effect Transistor (TFET) with a high current drivability is demonstrated, which features a vertically-stacked SiGe nanosheet (NS) with high Ge content and gate-all-around(GAA) structure to improve carrier injection efficiency and gate controllability. A multi-NS Si 0.2 Ge0.8 channel is formed by the Si selective etching and Ge condensation technique. The measured data shows both the 50 mV/dec minimum subthreshold swing (SS) and 70 mV/dec average SS over 3 decades of drain current change. Compared to previously reported devices, it is clear that the proposed SiGe nanosheet TFET can achieve steeper switching and low-level leakage current with a low drive voltage as an alternative to conventional MOSFET.

中文翻译：

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平均亚阈值摆幅为 70 mV/Dec 的垂直堆叠 Si0.2Ge0.8 纳米片隧道 FET


展示了一种具有高电流驱动能力的新型 CMOS 兼容 SiGe 隧道场效应晶体管 (TFET)，其具有高 Ge 含量的垂直堆叠 SiGe 纳米片 (NS) 和环栅 (GAA) 结构，可改善载流子注射效率和浇口可控性。采用Si选择性刻蚀和Ge凝聚技术形成多NS Si 0.2 Ge0.8沟道。测量数据显示了 3 个十进制漏极电流变化期间 50 mV/dec 的最小亚阈值摆幅 (SS) 和 70 mV/dec 的平均 SS。与之前报道的器件相比，很明显，所提出的 SiGe 纳米片 TFET 可以以低驱动电压实现更陡的开关和低漏电流，作为传统 MOSFET 的替代品。