A titanium oxynitride (TiOxNy) resistive random-access memory (RRAM) with write-once-read-many-times (WORM) characteristics is proposed. The TiOxNy resistive switching (RS) layer with a thickness of 62 nm was fabricated using a thermal nitridation process of an evaporated Ti metal film. The residual Ti layer with a thickness of 8 nm is used as the bottom contact. The Al/TiOxNy/Ti/n+-Si RRAM shows a large memory window of 107 at a low read voltage of 0.2 V. Stable high-resistance state (HRS) and low-resistance state (LRS) are observed in the endurance test for 104 read cycles. High read-disturb immunity can be found for over 104 s. The energy band diagram, carrier conduction and the RS mechanisms of the RRAM are investigated.

中文翻译：

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使用热氮化工艺制造的氮氧化钛的电阻开关行为


提出了一种具有一次写入多次读取（WORM）特性的氮氧化钛（TiOxNy）电阻式随机存取存储器（RRAM）。厚度为 62 nm 的 TiOxNy 电阻开关 (RS) 层是使用蒸发的 Ti 金属薄膜的热氮化工艺制造的。剩余的Ti层厚度为8 nm，用作底部接触。 Al/TiOxNy/Ti/n+-Si RRAM 在 0.2 V 的低读取电压下显示出 107 的大存储窗口。在耐久性测试中观察到稳定的高阻态 (HRS) 和低阻态 (LRS)。 104 个读取周期。可以发现超过 104 秒的高读取干扰免疫力。研究了 RRAM 的能带图、载流子传导和 RS 机制。