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Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure
IEEE Electron Device Letters ( IF 4.1 ) Pub Date : 2021-05-06 , DOI: 10.1109/led.2021.3077894
Meng Zhang , Jinxuan Wu , Haotao Lin , Xianjun Zhang , Jian-Long Xu , Yan Yan , Sui-Dong Wang , Man Wong , Hoi-Sing Kwok

In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (1014 - 1015 jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.

中文翻译:


基于混合InGaZnO/C8-BTBT异质结结构的紫外到近红外宽带光电晶体管



在这封信中,基于宽带隙有机-无机半导体双层结构的双极光电晶体管被设计用于宽带光学检测。通过有目的的材料选择和能带匹配,获得异质结界面的能级差,促进光致电荷分离,实现从紫外到近红外的光学检测。通过场效应调节抑制暗电流,光电晶体管表现出高归一化探测率(1014 - 1015 琼斯)。有机半导体材料的多样性为通过与无机半导体材料的能带匹配来实现宽带检测提供了广泛的选择。
更新日期:2021-05-06
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