A novel steep-slope field-effect-transistor is proposed to break the thermionic limit by using the intrinsic isolated states in materials. The monolayer C₃₁ is used as the injection source to self-filter out high-energy electrons and strain engineering is adopted to modulate the energy gap and IS width. It is found that, under 8% biaxial tensile strain, the calculated subthreshold swing is as low as ∼28.7mVdec⁻¹ with a high current ratio (I _ON/I _OFF) of ∼3.9נ10⁷, demonstrating that the proposed strategy could be a promising candidate for the future developments of low-power nanodevices.

中文翻译：

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应变工程 C31 场效​​应晶体管：一种通过使用内在隔离状态的电子注入来打破 60mV/decade 的新策略

提出了一种新颖的陡坡场效应晶体管，通过使用材料中的固有隔离状态来打破热电子极限。单层C ₃₁用作注入源以自滤除高能电子，并采用应变工程来调节能隙和IS宽度。结果表明，在 8% 双轴拉伸应变下，计算出的亚阈值摆幅低至 ~28.7mVdec ^-1且电流比 ( I _ON / I _OFF ) 为 ~3.9נ10 ⁷，表明所提出的策略可以低功率纳米器件未来发展的一个有希望的候选者。