当前位置: X-MOL 学术Surf. Rev. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
PHOTOELECTRON SPECTROSCOPY STUDIES ON Al2O3 FILMS ON p-GaN(0001)
Surface Review and Letters ( IF 1.2 ) Pub Date : 2021-06-30 , DOI: 10.1142/s0218625x21500773
R. LEWANDKÓW 1 , M. GRODZICKI 1 , P. MAZUR 1
Affiliation  

In order to determine its electronic and chemical properties, the Al2O3/p-GaN(0001) interface is studied in situ by the X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Using physical vapor deposition (PVD) method, the Al2O3 film is deposited step by step under ultra-high vacuum (UHV) onto p-GaN(0001) surface covered with residual native Ga oxide. Prior to the first Al2O3 layer evaporation, binding energy of the Ga 3d substrate line is equal to 20.5eV. The PVD method of deposition leads to an amorphous Al2O3 film formation. For the final 12.0nm thick Al2O3 film binding energy of the Al 2p line is set at 76.0eV and for the O 1s line at 532.9eV. The valence band offset (VBO) and the conduction band offset (CBO) of the Al2O3/p-GaN(0001) interface are determined to be equal to 1.6eV and 1.8eV, respectively.

中文翻译:

p-GaN (0001) 上 Al2O3 薄膜的光电子能谱研究

为了确定其电子和化学性质,研究了Al 2 O 3 /p-GaN(0001)界面原位通过 X 射线和紫外光电子能谱仪(XPS 和 UPS)。使用物理气相沉积 (PVD) 方法,在超高真空 (UHV) 下将 Al 2 O 3薄膜逐步沉积到覆盖有残留原生 Ga 氧化物的 p-GaN(0001) 表面上。在第一个 Al 2 O 3层蒸发之前,Ga 3 的结合能d基板线等于 20.5eV。PVD沉积方法导致形成非晶Al 2 O 3膜。对于最终的 12.0nm厚Al 2 O 3薄膜Al 2 的结合能p行设置为 76.0eV 和 O 1s线在 532.9eV。Al 2 O 3 /p-GaN(0001)界面的价带偏移(VBO)和导带偏移(CBO)被确定为等于-1.6eV 和 1.8eV,分别。
更新日期:2021-06-30
down
wechat
bug