In order to determine its electronic and chemical properties, the Al₂O₃/p-GaN(0001) interface is studied in situ by the X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Using physical vapor deposition (PVD) method, the Al₂O₃ film is deposited step by step under ultra-high vacuum (UHV) onto p-GaN(0001) surface covered with residual native Ga oxide. Prior to the first Al₂O₃ layer evaporation, binding energy of the Ga 3d substrate line is equal to 20.5eV. The PVD method of deposition leads to an amorphous Al₂O₃ film formation. For the final 12.0nm thick Al₂O₃ film binding energy of the Al 2p line is set at 76.0eV and for the O 1s line at 532.9eV. The valence band offset (VBO) and the conduction band offset (CBO) of the Al₂O₃/p-GaN(0001) interface are determined to be equal to −1.6eV and 1.8eV, respectively.

中文翻译：

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p-GaN (0001) 上 Al2O3 薄膜的光电子能谱研究

为了确定其电子和化学性质，研究了Al ₂ O ₃ /p-GaN(0001)界面原位通过 X 射线和紫外光电子能谱仪（XPS 和 UPS）。使用物理气相沉积 (PVD) 方法，在超高真空 (UHV) 下将 Al ₂ O ₃薄膜逐步沉积到覆盖有残留原生 Ga 氧化物的 p-GaN(0001) 表面上。在第一个 Al ₂ O ₃层蒸发之前，Ga 3 的结合能d基板线等于 20.5eV。PVD沉积方法导致形成非晶Al ₂ O ₃膜。对于最终的 12.0nm厚Al ₂ O ₃薄膜Al 2 的结合能p行设置为 76.0eV 和 O 1s线在 532.9eV。_{Al 2} O ₃ /p-GaN(0001)界面的价带偏移(VBO)和导带偏移(CBO)被确定为等于-1.6eV 和 1.8eV，分别。