The tritium analysis in tritium/deuterium-containing zirconium thin films was performed using elastic backscattering spectrometry (EBS) and β-ray induced X-ray spectrometry (BIXS). The EBS energy spectra were simulated with the SIMNRA program to obtain the tritium depth profiles and the total tritium contents in the samples. Two stopping powers used in the SIMNRA program were compared and it was shown that the SRIM stopping power in the simulations was better than the Ziegler/Biersack stopping power. In the BIXS that incorporated Monte Carlo simulation data, the β-ray stopping layers between the X-ray detector and the sample were Al thin film (BIXS-Al) and Ar gas (BIXS-Ar), respectively. The pile-up effects for BIXS X-ray spectra were corrected using Monte Carlo method for the first time. The tritium depth profiles and the total tritium contents in zirconium thin films obtained by the BIXS-Ar, BIXS-Al, EBS and the pressure, volume and temperature (PVT) method were compared. The possible reasons for the difference between the BIXS-Ar and BIXS-Al were discussed and the generality of Al thin film as the β-ray stopping layer was tested and a standard procedure of BIXS method for analyzing tritium-containing solid materials was proposed, in which the BIXS-Al method was recommended.

中文翻译：

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使用 BIXS 和 EBS 分析锆薄膜中的氚：铝薄膜作为 BIXS 中 β 射线阻挡层的通用性测试

使用弹性背散射光谱法 (EBS) 和 β 射线诱导 X 射线光谱法 (BIXS) 进行含氚/氘锆薄膜中的氚分析。利用SIMNRA程序模拟EBS能谱，获得样品中的氚深度剖面和总氚含量。对 SIMNRA 程序中使用的两种阻止本领进行了比较，结果表明，模拟中的 SRIM 阻止本领优于 Ziegler/Biersack 阻止本领。在结合了蒙特卡罗模拟数据的BIXS中，X射线探测器和样品之间的β射线阻挡层分别是Al薄膜（BIXS-Al）和Ar气体（BIXS-Ar）。首次利用蒙特卡罗方法对BIXS X射线谱的堆积效应进行了校正。比较了BIXS-Ar、BIXS-Al、EBS和压力、体积和温度(PVT)方法获得的锆薄膜中的氚深度分布和总氚含量。讨论了BIXS-Ar和BIXS-Al差异的可能原因，测试了Al薄膜作为β射线阻挡层的通用性，提出了分析含氚固体材料的BIXS方法的标准程序，其中推荐使用BIXS-Al方法。