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The Application of Sputtered Gallium Oxide as Buffer for Cu(In,Ga)Se2 Solar Cells
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-30 , DOI: 10.1002/pssr.202100180 Wolfram Witte 1 , Stefan Paetel 1 , Richard Menner 1 , Andreas Bauer 1 , Dimitrios Hariskos 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-30 , DOI: 10.1002/pssr.202100180 Wolfram Witte 1 , Stefan Paetel 1 , Richard Menner 1 , Andreas Bauer 1 , Dimitrios Hariskos 1
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Crystalline gallium oxide is a promising wide-bandgap semiconductor material, especially for applications in high-frequency and high-power devices. With an optical bandgap energy well above 4 eV, which implies no visible light absorption, it is also a candidate for one of the front-side layers in thin-film solar cells. X-ray amorphous gallium oxide (a-Ga2O3) deposited by RF magnetron sputtering is applied as an n-type buffer layer in substrate-type configuration solar cells based on industry-relevant inline coevaporated Cu(In,Ga)Se2 (CIGS) absorbers, which include an i-ZnO/ZnO:Al bilayer as the front electrode. The cells exhibit an efficiency peak at Ga2O3 deposition temperatures in the range of 140–180 °C and show mostly a gain in short-circuit current density compared with the CdS-buffered reference cells, as a result of the high optical bandgap of a-Ga2O3 in the range of 4.6–4.8 eV. The CIGS solar cells with sputtered a-Ga2O3 buffers reach efficiencies of almost 14%, lacking in open-circuit voltage and fill factor, whereas the CdS-buffered cells are on a 16–17% level. Light soaking of the cells leads to a slight improvement of the fill factor, but the gap in open-circuit voltage of 80–100 mV in contrast to the CdS-buffered reference cells remains unaffected.
中文翻译：
溅射氧化镓作为Cu(In,Ga)Se2太阳能电池缓冲液的应用
结晶氧化镓是一种很有前途的宽带隙半导体材料，尤其适用于高频和大功率器件。由于光学带隙能量远高于 4 eV，这意味着没有可见光吸收，因此它也是薄膜太阳能电池正面层之一的候选材料。通过射频磁控溅射沉积的X 射线非晶氧化镓 (a-Ga 2 O 3 ) 作为 n 型缓冲层应用于基于工业相关内联共蒸发 Cu(In,Ga)Se 2 的基板型配置太阳能电池(CIGS) 吸收器，包括 i-ZnO/ZnO:Al 双层作为前电极。电池在 Ga 2 O 3处表现出效率峰值沉积温度在 140–180 °C 范围内，并且与 CdS 缓冲的参考电池相比，短路电流密度主要增加，这是由于 a-Ga 2 O 3在范围内的高光学带隙4.6–4.8 eV。带有溅射 a-Ga 2 O 3缓冲器的 CIGS 太阳能电池的效率几乎达到 14%，缺乏开路电压和填充因子，而 CdS 缓冲电池的效率为 16-17%。电池的光浸泡导致填充因子略有提高，但与 CdS 缓冲的参考电池相比，80-100 mV 的开路电压差距仍然不受影响。
更新日期：2021-06-30
中文翻译：
溅射氧化镓作为Cu(In,Ga)Se2太阳能电池缓冲液的应用
结晶氧化镓是一种很有前途的宽带隙半导体材料，尤其适用于高频和大功率器件。由于光学带隙能量远高于 4 eV，这意味着没有可见光吸收，因此它也是薄膜太阳能电池正面层之一的候选材料。通过射频磁控溅射沉积的X 射线非晶氧化镓 (a-Ga 2 O 3 ) 作为 n 型缓冲层应用于基于工业相关内联共蒸发 Cu(In,Ga)Se 2 的基板型配置太阳能电池(CIGS) 吸收器，包括 i-ZnO/ZnO:Al 双层作为前电极。电池在 Ga 2 O 3处表现出效率峰值沉积温度在 140–180 °C 范围内，并且与 CdS 缓冲的参考电池相比，短路电流密度主要增加，这是由于 a-Ga 2 O 3在范围内的高光学带隙4.6–4.8 eV。带有溅射 a-Ga 2 O 3缓冲器的 CIGS 太阳能电池的效率几乎达到 14%，缺乏开路电压和填充因子，而 CdS 缓冲电池的效率为 16-17%。电池的光浸泡导致填充因子略有提高，但与 CdS 缓冲的参考电池相比，80-100 mV 的开路电压差距仍然不受影响。
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