A deep understanding of UV light response of KTaO₃ (KTO) has been explored by means of temperature dependent UV treatment. Two different temperature dependent measurement schemes have been utilized to differentiate between the shallow carriers and deep carriers. A fake transition at 220 K is found, which is actually due to the UV-induced oxygen sub-bands, resulting in the transition in photo-response from transient to persistent. Giant change in the resistance is observed for cooling as compared to heating of substrate, which is credited to the small recombination rate at low temperatures. This temperature dependent resistance response of KTaO₃ under UV light provides an importance of the measurement way of photo-charge carriers in KTaO₃.

已经通过温度相关的紫外线处理探索了对 KTaO ₃ (KTO)的紫外线响应的深刻理解。已经利用两种不同的温度相关测量方案来区分浅载流子和深载流子。发现了 220 K 处的假跃迁，这实际上是由于紫外线引起的氧子带，导致光响应从瞬态转变为持久性。与基板加热相比，冷却时观察到电阻的巨大变化，这归因于低温下的小复合率。KTaO的这种温度依赖性电阻响应₃在UV光下提供了在KTaO光载流子的测定方法的重要性₃。