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Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures
Microelectronic Engineering ( IF 2.6 ) Pub Date : 2021-06-30 , DOI: 10.1016/j.mee.2021.111594
Yan Liu , Simin Chen , Zhaojun Lin , Guangyuan Jiang , Tao Wang

In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD) were used to compare the effects of ratio of LG to LGD on the source access resistance (RGS) at 300 K, 350 K, and 400 K. The results showed that the ratio of LG to LGD had a significant effect on RGS at the above-mentioned each temperature, which can be attributed to the polarization Coulomb field (PCF) scattering. In addition, the effects of the ratio of LG to LGD on RGS in the two AlGaN/AlN/GaN HFETs prepared in this work were different at different temperatures. This indicated that elevated-temperature performance of AlGaN/AlN/GaN HFETs can be improved by optimizing the ratio of LG to LGD based on PCF scattering.



中文翻译:

不同温度下栅极长度与栅漏距离比对 AlGaN/AlN/GaN HFET 源极接入电阻影响的比较

在这项工作中,使用具有不同栅极长度 ( L G ) 与栅极-漏极距离 ( L GD )比率的两个 AlGaN/AlN/GaN 异质结构场效应晶体管 (HFET)来比较L GL比率的影响GD在 300 K、350  K和 400  K时的源访问电阻 ( R GS )  。结果表明,L GL GD的比值对R GS有显着影响在上述每个温度下,这可以归因于极化库仑场(PCF)散射。另外,之比的影响大号ģ大号GDř GS两个的AlGaN / AlN成/ GAN的HFET在这项工作中制备的是在不同温度下不同。这表明可以通过基于 PCF 散射优化L GL GD的比率来提高 AlGaN/AlN/GaN HFET 的高温性能。

更新日期:2021-07-12
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