In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (L_G) to gate-drain distance (L_GD) were used to compare the effects of ratio of L_G to L_GD on the source access resistance (R_GS) at 300 K, 350 K, and 400 K. The results showed that the ratio of L_G to L_GD had a significant effect on R_GS at the above-mentioned each temperature, which can be attributed to the polarization Coulomb field (PCF) scattering. In addition, the effects of the ratio of L_G to L_GD on R_GS in the two AlGaN/AlN/GaN HFETs prepared in this work were different at different temperatures. This indicated that elevated-temperature performance of AlGaN/AlN/GaN HFETs can be improved by optimizing the ratio of L_G to L_GD based on PCF scattering.

在这项工作中，使用具有不同栅极长度 ( L _G ) 与栅极-漏极距离 ( L _GD )比率的两个 AlGaN/AlN/GaN 异质结构场效应晶体管 (HFET)来比较L _G与L比率的影响_GD在 300 K、350  K和 400  K时的源访问电阻 ( R _GS )  。结果表明，L _G与L _GD的比值对R _GS有显着影响在上述每个温度下，这可以归因于极化库仑场（PCF）散射。另外，之比的影响大号_ģ到大号_GD上ř _GS两个的AlGaN / AlN成/ GAN的HFET在这项工作中制备的是在不同温度下不同。这表明可以通过基于 PCF 散射优化L _G与L _GD的比率来提高 AlGaN/AlN/GaN HFET 的高温性能。