In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO₂ nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO₂ and Sb-doped SnO₂ (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO₂ nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires.

在这项工作中，我们报告了 Sb 掺杂对通过气-液-固 (VLS) 方法获得的 SnO ₂纳米线的光学和电学性质的影响。发现未掺杂的 SnO ₂和 Sb 掺杂的 SnO ₂ (ATO) 纳米线的吸收边分别为 3.30 eV 和 3.66 eV 。能量转移与掺杂纳米线中发生的 Burstein-Moss 效应有关。我们研究了作为载流子浓度函数的 ATO 光学带隙（ΔE = 0.36 eV）位移。Sb 的掺入导致单纳米线 ATO 器件的电阻率降低了三个数量级。此外，发现未掺杂的 SnO ₂ 纳米线表现出半导体特性，而在 ATO 纳米线中观察到大约 170 K 的金属-绝缘体转变 (MIT)。