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Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes
Organic Electronics ( IF 2.7 ) Pub Date : 2021-06-30 , DOI: 10.1016/j.orgel.2021.106261
Junmo Kim , Jeong Ha Hwang , Yong Woo Kwon , Hyeong Woo Bae , Myungchan An , Wonho Lee , Donggu Lee

In this work, we developed a single high-performance SiNx encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 °C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 × 10−5 g/m2·day. To verify the stability of the PECVD process, we applied the SiNx encapsulation layer directly to top-emitting organic light-emitting diodes. The results showed minor changes in the current-density–voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.



中文翻译:

顶发射有机发光二极管薄膜封装层的氢辅助低温等离子体增强化学气相沉积

在这项工作中,我们开发了一种单一的高性能 SiN x封装层,可以通过低温等离子体增强化学气相沉积 (PECVD) 将其直接集成到有机器件中。我们在 80 °C 的温度下研究了氢辅助低温 PECVD 工艺。薄膜密度随着氢气比例的增加而提高,透湿性小于5×10 -5  g/m 2 ·天。为了验证 PECVD 工艺的稳定性,我们将 SiN x封装层直接应用于顶部发光的有机发光二极管。结果表明,PECVD 工艺后电流-密度-电压特性变化很小,并且在浸水试验后具有高可靠性。

更新日期:2021-07-05
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