In this work, we developed a single high-performance SiN_x encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 °C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 × 10⁻⁵ g/m²·day. To verify the stability of the PECVD process, we applied the SiN_x encapsulation layer directly to top-emitting organic light-emitting diodes. The results showed minor changes in the current-density–voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.

在这项工作中，我们开发了一种单一的高性能 SiN _x封装层，可以通过低温等离子体增强化学气相沉积 (PECVD) 将其直接集成到有机器件中。我们在 80 °C 的温度下研究了氢辅助低温 PECVD 工艺。薄膜密度随着氢气比例的增加而提高，透湿性小于5×10 ^-5  g/m ² ·天。为了验证 PECVD 工艺的稳定性，我们将 SiN _x封装层直接应用于顶部发光的有机发光二极管。结果表明，PECVD 工艺后电流-密度-电压特性变化很小，并且在浸水试验后具有高可靠性。