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Vanadium Oxide Thermal Sensitive Thin Film with TiN Absorbing Layer for Uncooled Infrared Bolometer
Integrated Ferroelectrics ( IF 0.7 ) Pub Date : 2021-06-30 , DOI: 10.1080/10584587.2021.1911256
Bin Wang 1, 2 , Ning Li 3 , Wan-Feng Xie 1, 2 , Jian-Jun Lai 4 , Shu-Ying Wang 1, 2 , Yu Zheng 1, 2 , Zong-Tao Chi 1, 2 , Bing Yu 1 , You-Qing Shen 1 , Hai-Lin Cong 1
Affiliation  

Abstract

Multilayers’ absorption DMDM structure of SiO2/TiNx/SiO2/VOx structure for 8-14 infrared wavelengths is proposed and simulated. Between mid-infrared 8 μm and 14 μm wavelengths, infrared detector with this structure and thermal sensitive VOx of −7%/K TCR, which exhibits high infrared absorption about average 83%, has been fabricated and tested successfully.



中文翻译:

用于非冷却红外辐射热计的具有 TiN 吸收层的氧化钒热敏薄膜

摘要

提出并模拟了SiO 2 /TiN x /SiO 2 /VO x结构对8-14个红外波长的多层吸收DMDM结构。在中红外 8 μm 和 14 μm 波长之间,具有这种结构和热敏 VO x为 -7%/K TCR 的红外探测器已成功制造并测试,其具有平均约 83% 的高红外吸收率。

更新日期:2021-06-30
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