The interaction between spin and charge degrees of freedom offers a powerful tool to manipulate magnetization in memories by the current induced spin–orbit torque. This novel phenomenon, conventionally existing in semiconductors and metallic systems, has recently been observed in transition metal oxides, exhibiting a surprising large spin-Hall angle. In this Perspective, we will review recent research progress in the spin–charge conversion in transition metal oxides, the remaining challenges, and new opportunities. We will first briefly summarize recent progress in the spin–charge conversion in representative transition metal oxides, including SrIrO₃, SrRuO₃, and IrO₂, along with other materials predicted by calculations. Next, we will survey the possible candidate materials in the family of transition metal oxides. Recent advances in the growth of SrIrO₃ films will be reviewed along with the implications on the study of the spin-Hall effect. We will also discuss other promising candidates that could serve as the spin source, including films of pyrochlore and delafossite oxides as well as oxide heterostructures.

中文翻译：

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过渡金属氧化物中的自旋电荷转换

自旋和电荷自由度之间的相互作用提供了一种强大的工具，可以通过电流感应的自旋轨道扭矩来操纵存储器中的磁化。这种新现象通常存在于半导体和金属系统中，最近在过渡金属氧化物中观察到，表现出令人惊讶的大自旋霍尔角。在这个视角中，我们将回顾过渡金属氧化物中自旋电荷转换的最新研究进展、剩余挑战和新机遇。我们将首先简要总结代表性过渡金属氧化物中自旋电荷转换的最新进展，包括 SrIrO ₃、SrRuO ₃和 IrO ₂，以及通过计算预测的其他材料。接下来，我们将调查过渡金属氧化物家族中可能的候选材料。将回顾SrIrO ₃薄膜生长的最新进展以及对自旋霍尔效应研究的影响。我们还将讨论可用作自旋源的其他有前途的候选物，包括烧绿石和铁铁矿氧化物薄膜以及氧化物异质结构。