We summarize our recent progress in Metal organic vapor phase epitaxy (MOVPE) van der Waals epitaxy of wafer-scale 2D layered hexagonal boron nitride (h-BN) on sapphire and subsequently grown III-N materials. This one step growth process allows for mechanical transfer of GaN-based devices from h-BN on sapphire to various supports. We first review the growth of h-BN on unpatterned and patterned sapphire templates. Second, we describe h-BN growth on dielectric pre-patterned sapphire templates, which enables dicing-free GaN-based device structures’ pick-and-place heterogenous integration of III-N devices. Third, we review the growth of self-assembled 1D GaN-based nanowire light emitting diode (LED) structures on layered 2D h-BN for mechanical transfer of nanowire LEDs. Together, these results illustrate the potential of wafer-scale van der Waals h-BN MOVPE to enhance the III-N device functionality and to improve III-N processing technology.

中文翻译：

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晶圆级分层二维六方氮化硼上 GaN 基混合尺寸异质结构的 MOVPE——III 族氮化物柔性光电子学的关键推动者

我们总结了我们最近在蓝宝石上的金属有机气相外延 (MOVPE) 范德华外延和随后生长的 III-N 材料上的晶圆级 2D 层状六方氮化硼 (h-BN) 外延方面的进展。这一一步生长过程允许将基于 GaN 的器件从蓝宝石上的 h-BN 机械转移到各种支撑。我们首先回顾了 h-BN 在无图案和有图案的蓝宝石模板上的生长。其次，我们描述了在电介质预图案化蓝宝石模板上的 h-BN 生长，这使得基于 GaN 的器件结构能够实现 III-N 器件的拾放异质集成。第三，我们回顾了自组装 1D GaN 基纳米线发光二极管 (LED) 结构在分层 2D h-BN 上的生长，用于纳米线 LED 的机械转移。一起，