As unique perovskite transparent oxide semiconductors, high-mobility La-doped BaSnO₃ films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO₃ films. In this work, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO₃ films (with mobility up to 121 cm² V⁻¹ s⁻¹ at the carrier density of ∼4.0 × 10²⁰ cm⁻³ at room temperature) directly on SrTiO₃ single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of La-doped BaSnO₃ films were characterized by combined high-resolution x-ray diffraction, x-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room-temperature electron mobility of La-doped BaSnO₃ films achieved in this work is two to four times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 × 10²⁰ cm⁻³), the electron mobility value of 121 cm² V⁻¹ s⁻¹ achieved in our work is among the highest values for all reported doped BaSnO₃ films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which facilitates high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.

中文翻译：

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高压磁控溅射法一步外延高迁移率 La 掺杂 BaSnO3 薄膜

作为独特的钙钛矿透明氧化物半导体，通过分子束外延和脉冲激光沉积成功合成了高迁移率的 La 掺杂 BaSnO ₃薄膜。然而，磁控溅射是一种适用于大规模制造的广泛应用技术，如何生长高迁移率的 La 掺杂 BaSnO ₃薄膜仍然是一个巨大的挑战。在这项工作中，我们开发了一种合成高迁移率外延 La 掺杂 BaSnO ₃薄膜的方法（在室温下，载流子密度约为 4.0 × 10 ²⁰  cm ^-3时迁移率高达 121 cm ²  V ^-1  s ^-1 ) 直接在 SrTiO _{3 上}使用高压磁控溅射的单晶衬底。La掺杂的BaSnO ₃薄膜的结构和电学特性通过组合的高分辨率x射线衍射、x射线光电发射光谱和温度相关的电传输测量来表征。在这项工作中获得的 La 掺杂的 BaSnO ₃薄膜的室温电子迁移率是通过磁控溅射生长的薄膜的报告值的两到四倍。此外，在高载流子密度范围（n > 3 × 10 ²⁰  cm ^-3），电子迁移率值为 121 cm ²  V ^-1  s ^-1在我们的工作中取得的最高值是所有报道的掺杂 BaSnO ₃薄膜的最高值之一。结果表明，溅射过程中的高氩气压力在稳定完全松弛的薄膜和诱导氧空位方面起着至关重要的作用，这有利于室温下的高迁移率。我们的工作为大规模合成用于透明电子设备的高迁移率透明导电薄膜提供了一种简单而经济的方法。