Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g⁽²⁾(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.

中文翻译：

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来自 InGaN/GaN 量子点的纯单光子发射

基于光子的量子技术需要具有高纯度的单光子发射器。InGaN/GaN 量子点是开发单光子发射器的有希望的候选者，但通常表现出纯度不足的发射。在这里，从 InGaN 量子点测量高纯度的脉冲单光子发射。在准共振脉冲激励下，原始 g ⁽²⁾ (0) 值为 0.043 ± 0.009，无需任何校正。原则上，如此低的值足以用于量子密钥分发系统。