当前位置: X-MOL 学术APL Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Pure single-photon emission from an InGaN/GaN quantum dot
APL Materials ( IF 5.3 ) Pub Date : 2021-06-14 , DOI: 10.1063/5.0049488
M. J. Holmes 1, 2 , T. Zhu 3 , F. C.-P. Massabuau 3, 4 , J. Jarman 3 , R. A. Oliver 3 , Y. Arakawa 2
Affiliation  

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.

中文翻译:

来自 InGaN/GaN 量子点的纯单光子发射

基于光子的量子技术需要具有高纯度的单光子发射器。InGaN/GaN 量子点是开发单光子发射器的有希望的候选者,但通常表现出纯度不足的发射。在这里,从 InGaN 量子点测量高纯度的脉冲单光子发射。在准共振脉冲激励下,原始 g (2) (0) 值为 0.043 ± 0.009,无需任何校正。原则上,如此低的值足以用于量子密钥分发系统。
更新日期:2021-06-30
down
wechat
bug