Abstract

A graphene oxide film fabricated by removing water from a graphene oxide dispersion is a characteristic dielectric. The graphene oxide layers in such a film are interconnected through van der Waals interactions of oxygen-containing functionalities and cluster interlayer water. It has been shown that, after treatment of the film with supercritical fluids based on water and isopropyl alcohol, its robust structure is not destroyed, but the surface is “graphenized” and it acquires new properties. The resulting materials were studied by physicochemical methods of analysis (C, H, N analysis, XRD, IR and Raman spectroscopy). An electrophysical study of the film treated with supercritical isopropanol has demonstrated that the temperature dependence corresponds to a narrow-gap semiconductor, and the resistivity determined by the four-probe method at room temperature was ~3 Ω m/mm².

中文翻译：

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用超临界流体（iso-С3Н7ОН，Н2О）处理后氧化石墨烯薄膜的电导率变化

摘要

通过从氧化石墨烯分散体中去除水而制造的氧化石墨烯膜是特征电介质。这种薄膜中的氧化石墨烯层通过含氧官能团和簇层间水的范德华相互作用相互连接。研究表明，用基于水和异丙醇的超临界流体处理薄膜后，其坚固的结构没有被破坏，但表面被“石墨化”并获得了新的性能。通过物理化学分析方法（C、H、N 分析、XRD、IR 和拉曼光谱）研究所得材料。对用超临界异丙醇处理过的薄膜进行的电物理研究表明，温度依赖性对应于窄隙半导体，² .