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Permittivity features of multilayer nanoisland systems [FeNi–Al2O3]N
Physics Letters A ( IF 2.6 ) Pub Date : 2021-06-29 , DOI: 10.1016/j.physleta.2021.127546
F.A. Pudonin , I.A. Sherstnev , D.D. Noskova , G.N. Eroshenko , D.A. Egorov , A.M. Shadrin

We study the permittivity (ε) of multilayer nanoisland systems [FeNi–Al2O3]N with different layer thicknesses using spectral ellipsometry. A “metallic” behavior of the permittivity (Re(ε)<0) is found in structures with island FeNi layers, when there is a strong exchange interaction between the layers (dielectric layer thickness d<2 nm). When the exchange interaction in structures is strongly suppressed (Al2O3 layer's thickness d>4 nm), Re(ε)>0, which corresponds to the dielectric behavior of the permittivity. We conclude that the exchange interaction has a significant effect on the permittivity of structures. We also show that the Re(ε) dependences on the FeNi layer thickness for multilayer and single-layer structures are very close when the dielectric layer thickness d>4 nm.



中文翻译:

多层纳米岛系统的介电常数特征 [FeNi-Al 2 O 3 ] N

我们使用光谱椭偏法研究了具有不同层厚度的多层纳米岛系统 [FeNi-Al 2 O 3 ] N的介电常数 ( ε ) 。介电常数的“金属”行为(关于(ε)<0) 存在于具有岛状 FeNi 层的结构中,当层之间存在强交换相互作用时(介电层厚度 d<2纳米)。当结构中的交换相互作用被强烈抑制时(Al 2 O 3层的厚度d>4 纳米), 关于(ε)>0,这对应于介电常数的介电行为。我们得出结论,交换相互作用对结构的介电常数有显着影响。我们还表明,关于(ε) 多层和单层结构对 FeNi 层厚度的依赖性非常接近时,介电层厚度 d>4 纳米。

更新日期:2021-06-29
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