In order to enhance the field effect mobility of poly(3-dodecylthiophene), Si nanowires were added to the poly(3-dodecylthiophene) solution prior to film formation. The Si nanowires were produced by the electroless metal deposition method which involved the etching of silicon wafers in aqueous hydrofluoric acid and silver nitrate solution. The observation of scanning electron microscopy proved the uniform Si nanowires were obtained. The blend film was treated with thermal annealing to form ordered microcrystalline structure by self-organization. The annealing effect was measured by X-ray diffraction and atomic force microscopy which showed the enhancing diffraction peak and ordered atomic force microscopy images after annealing films. In the bottom gated field effect transistors, the blend film of Si nanowires and poly(3-dodecylthiophene) were formed on the SiO2/Si substrate by spin coating. The surface of the SiO2/Si substrate was coated with hexamethyldisilazane to produce a hydrophobic surface. The thickness of the Au source/drain electrodes was 100 nm. The annealing blend films worked as the semiconducting layer, 300 nm SiO2 worked as the gate dielectric and Si worked as the gate electrode. The charge carrier mobility of poly(3-dodecylthiophene) thin films was 0.015 cm•V•s and the charge carrier mobility of blend films was up to 0.68 cm•V•s. The remarkable increase in the field effect mobility over that of pristine poly(3-dodecylthiophene) film is due to the high conductivity of Si nanowires which act as fast conducting channel between the crystalline regions of the poly(3-dodecylthiophene) film. To confirm and enhance the field effect transistors properties, we used the electric-double-layer transistor based on the blend films in which ion gel worked as the gate dielectric instead of SiO2. Here, Au foil worked as the gate electrode to form a top-gated field effect transistors. The charge carrier mobility of blend films was found to be relatively higher (6.2 cm•V•s) when using ion gel as the dielectric layer.

中文翻译：

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基于硅纳米线和聚（3-十二烷基噻吩）混合物的场效应晶体管特性

为了提高聚（3-十二烷基噻吩）的场效应迁移率，在成膜前将硅纳米线加入到聚（3-十二烷基噻吩）溶液中。Si纳米线是通过化学镀金属沉积法生产的，该法涉及在氢氟酸水溶液和硝酸银溶液中蚀刻硅片。扫描电子显微镜观察证明获得了均匀的Si纳米线。共混膜经过热退火处理，通过自组织形成有序的微晶结构。通过X射线衍射和原子力显微镜测量退火效果，显示出增强的衍射峰和退火膜后有序的原子力显微镜图像。在底栅场效应晶体管中，通过旋涂在SiO2/Si衬底上形成Si纳米线和聚（3-十二烷基噻吩）的共混膜。SiO2/Si 衬底表面涂有六甲基二硅氮烷以产生疏水表面。Au源/漏电极的厚度为100nm。退火混合膜作为半导体层，300 nm SiO2 作为栅介质，Si 作为栅电极。聚(3-十二烷基噻吩)薄膜的载流子迁移率为0.015 cm•V•s，共混薄膜的载流子迁移率为0.68 cm•V•s。与原始聚（3-十二烷基噻吩）膜相比，场效应迁移率显着增加是由于硅纳米线的高导电性，其充当聚（3-十二烷基噻吩）膜的结晶区域之间的快速导电通道。为了确认和增强场效应晶体管的特性，我们使用了基于混合膜的双电层晶体管，其中离子凝胶代替 SiO2 作为栅极电介质。在这里，金箔用作栅电极以形成顶栅场效应晶体管。当使用离子凝胶作为介电层时，发现共混膜的电荷载流子迁移率相对较高（6.2 cm•V•s）。