In this work, a CMOS Miller Operational Amplifier (OpAmp) with high immunity to electromagnetic interference (EMI) is proposed. The proposed OpAmp has unique features, such as compact power and low output offset voltage, when compared to the classical Miller OpAmp and the robust Miller OpAmp reported in the literature. The proposed compact Miller OpAmp has a reduced area, when compared to the robust Miller OpAmp. The output offset current modeling equations are derived for the proposed compact Miller OpAmp including the body effect and channel length modulation. The results are validated with simulations in the presence of a test EMI signal of 1 Vpp in 1.8 V, 0.18 $\mu$m CMOS technology. The power consumption of the proposed compact Miller OpAmp with source degeneration resistance $R_S$ is 8% less and the area is 5.6% less than the robust Miller OpAmp with source degeneration resistance $R_S$. The performance result shows that the maximum EMI-induced input offset voltage for the proposed compact Miller OpAmp with source degeneration resistance $R_S$ is 4.6 mV over a wide frequency range from 1 MHz to 1 GHz, which is lower when compared to the classical Miller OpAmp and the robust Miller OpAmp with source degeneration resistance $R_S$.

中文翻译：

---

具有高 EMI 抗扰度的紧凑型 CMOS 米勒运算放大器

在这项工作中，提出了一种具有高抗电磁干扰 (EMI) 能力的 CMOS 米勒运算放大器 (OpAmp)。与文献中报道的经典米勒运算放大器和稳健的米勒运算放大器相比，提议的运算放大器具有独特的功能，例如紧凑的功率和低输出失调电压。与稳健的米勒运算放大器相比，所提议的紧凑型米勒运算放大器的面积更小。输出偏移电流建模方程是针对建议的紧凑型米勒运算放大器推导出来的，包括体效应和通道长度调制。结果在存在 1 Vpp in 1.8 V, 0.18 测试 EMI 信号的情况下通过仿真得到验证 $\mu$m CMOS 技术。建议的具有源退化抗性的紧凑型米勒运算放大器的功耗$R_S$ 比具有源退化抗性的稳健米勒运算放大器小 8%，面积小 5.6% $R_S$. 性能结果表明，所提出的具有源极退化电阻的紧凑型米勒运算放大器的最大 EMI 感应输入失调电压$R_S$ 在 1 MHz 至 1 GHz 的宽频率范围内为 4.6 mV，与经典的米勒运算放大器和具有源退化电阻的稳健米勒运算放大器相比更低 $R_S$.