The SiC mosfet in the medium-voltage direct-current (MVdc) transportation electrification system features faster switching performance, while simultaneously binging more significant electromagnetic interference (EMI) issues within the rolling stocks, substations, and radiated disturbance into space along the catenaries and tracks. Due to the necessity to involve both the transient characteristics of power semiconductor devices and the stray parameters of all the equipment in the analysis of EMI, it is considerably challenging to perform wideband device-level simulation on traditional commercial software for such a complex system with numerous trains and stations. A computationally efficient method for wideband modeling and simulation of the MVdc high-speed railway system for the assessment of conducted EMI during the project design stage is proposed in this article. Physical characteristics of the semiconductor devices, parasitic parameters of the mosfet package, and converter topology are all taken into consideration to provide not only accurate system-level performance of the system but also an insight into high-frequency characteristics under different operation conditions. The calculation burden is alleviated by a hierarchical circuit partitioning architecture based on the frequency-dependent time-domain transmission line model and the Norton equivalent parameter extraction of each mosfet module to split the whole system into several smaller subcircuits in terms of matrix size, and a fully parallel implementation of the MVdc system is carried out on the graphics processor. The developed program is used to study the case of Jing–Zhang high-speed railway system topology, which is compatible to be modified to the MVdc project. Simulation results show that it is essential to estimate the EMI level comprehensively considering the alternative of speed and dc voltage.

中文翻译：

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功率 SiC mosfet 模块的宽带建模和 MVDC 铁路电气化系统的传导 EMI 预测

中压直流 (MVdc) 运输电气化系统中的 SiC mosfet 具有更快的开关性能，同时将机车车辆、变电站内更严重的电磁干扰 (EMI) 问题以及沿接触网和轨道辐射到空间的辐射干扰问题. 由于在 EMI 分析中需要同时涉及功率半导体器件的瞬态特性和所有设备的杂散参数，对于这样一个复杂系统，在传统商业软件上进行宽带器件级仿真具有相当大的挑战性。火车和车站。本文提出了一种计算高效的 MVdc 高速铁路系统宽带建模和仿真方法，用于在项目设计阶段评估传导 EMI。半导体器件的物理特性、mosfet 封装的寄生参数和转换器拓扑都被考虑在内，不仅可以提供准确的系统级性能，还可以深入了解不同操作条件下的高频特性。通过基于频率相关时域传输线模型的分层电路分区架构和每个 mosfet 模块的诺顿等效参数提取，将整个系统拆分为矩阵大小的几个更小的子电路，减轻了计算负担，MVdc 系统的完全并行实现是在图形处理器上进行的。开发的程序用于研究京张高速铁路系统拓扑的案例，该程序兼容修改为MVdc项目。仿真结果表明，综合考虑速度和直流电压的变化来估计 EMI 水平是必不可少的。