High Speed Evanescent Quantum-Dot Lasers on Si,Laser & Photonics Reviews

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High Speed Evanescent Quantum-Dot Lasers on Si
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2021-06-27 , DOI: 10.1002/lpor.202100057
Yating Wan _{1,

2} , Chao Xiang ₂ , Joel Guo ₂ , Rosalyn Koscica ₃ , MJ Kennedy ₂ , Jennifer Selvidge ₃ , Zeyu Zhang ₂ , Lin Chang ₂ , Weiqiang Xie ₂ , Duanni Huang ₄ , Arthur C. Gossard _{1,

2,

3} , John E. Bowers _{1,

2,

3}

Affiliation

Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record-setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side-mode-suppression-ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 °C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si-on-insulator low-loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.

中文翻译：

Si上的高速渐逝量子点激光器

III-V/Si 外延的显着改进将量子点 (QD) 推向了 Si 光子学的前沿。为了开发高效、可扩展和多功能的集成系统，必须找到一种商业上可行的解决方案，以允许 QD 激光输出与硅波导有效耦合。在这项工作中，详细介绍了这种平台的设计、制造和表征。据报道，在 Si 上创纪录的渐逝 QD 分布式反馈激光器具有 13 GHz 的 3 dB 调制带宽、4 mA 的阈值电流、60 dB 的侧模抑制比和 26 kHz 的基本线宽。后端III/V工艺的最高温度仅为200°C，完全兼容CMOS工艺热预算。整个过程与基板无关，因此可以利用先前在 Si 上生长的 QD 激光器的发展，并从规模经济中受益。量子点激光器和绝缘体上硅低损耗波导平台的宽带和通用性可以扩展，以构建整个 O 波段的全功能光子集成电路。

更新日期：2021-08-15

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