On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm⁻¹. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

中文翻译：

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绝缘体上掺铒薄膜铌酸锂上的片上集成波导放大器

使用光刻辅助化学机械蚀刻 (PLACE) 技术演示了在绝缘体上掺铒薄膜铌酸锂 (TFLNOI) 上制造的集成光波导的片上光放大。对于 3.6 cm 的波导长度，在 1530 nm 的峰值发射波长处测量到小信号增益范围内 18 dB 的最大内部净增益，表明每单位长度的差分增益为 5 dB cm ^-1。这项工作为 TFLNOI 平台上各种有源和无源光子组件的单片集成铺平了道路。