Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy,Physica Status Solidi-Rapid Research Letters

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Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-25 , DOI: 10.1002/pssr.202100283
Elisa Maddalena Sala _{1,

2} , Max Godsland ₂ , Aristotelis Trapalis _{1,

2} , Jon Heffernan _{1,

2}

Affiliation

InAs quantum dots (QDs) are grown on bare InP(001) via droplet epitaxy (DE) in metal–organic vapor phase epitaxy (MOVPE). Capping layer engineering, used to control QD size and shape, is explored for DE QDs in MOVPE. The method allows for the tuning of the QD emission over a broad range of wavelengths, ranging from the O- to the L-band. The effect of varying the InP capping layer is investigated optically by macro- and micro-photoluminescence (PL, µPL) and morphologically by transmission electron microscopy (TEM). A strong 500 nm blueshift of the QD emission wavelength is observed when the capping layer is reduced from 20 to 8 nm, which is reflected by a clear size reduction of the buried QDs.

中文翻译：

帽厚度对金属-有机气相外延中液滴外延生长的 InAs/InP 量子点的影响

InAs 量子点 (QD) 通过金属有机气相外延 (MOVPE) 中的液滴外延 (DE) 在裸 InP(001) 上生长。在 MOVPE 中探索用于控制 QD 尺寸和形状的覆盖层工程。该方法允许在从 O 波段到 L 波段的广泛波长范围内调谐 QD 发射。通过宏观和微观光致发光 (PL, µPL) 和透射电子显微镜 (TEM) 从形态学上研究改变 InP 覆盖层的影响。当覆盖层从 20 nm 减少到 8 nm 时，观察到 QD 发射波长的强 500 nm 蓝移，这反映在掩埋 QD 的明显尺寸减小上。

更新日期：2021-06-25

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