In this study, we have used the impedance measurement to investigate the carrier transport in different diode structures fabricated with a well characterized organic hole transport material, m-MTDATA. It is demonstrated that the carrier injection level can be controlled by properly designing the device structures. In such devices, the field dependence of carrier mobility is observed to be very different since the injected carriers experienced distinct disordered during the transport due to varying carrier injection level. With a proper control of the device structure, the field dependence is observed to have negative P-F coefficient for carriers injected into high energy transport states. Finally, all the transport parameters involved in the classical Gaussian Disorder Model is derived successfully under certain assumption.

在这项研究中，我们使用阻抗测量来研究不同二极管结构中的载流子传输，这些二极管结构是用充分表征的有机空穴传输材料 m-MTDATA 制造的。结果表明，可以通过适当设计器件结构来控制载流子注入水平。在这样的器件中，由于载流子注入水平的变化，注入的载流子在传输过程中经历了明显的无序，因此观察到载流子迁移率的场依赖性非常不同。通过适当控制器件结构，观察到场依赖性对于注入高能传输态的载流子具有负 PF 系数。最后，经典高斯无序模型中涉及的所有输运参数都是在一定的假设下成功推导出来的。