Charge trapping is studied in the context of random telegraph noise (RTN) and low-frequency noise (1/f noise), aiming unified statistical modeling. Analytical formulations for 1/f noise (frequency domain) and RTN (time domain) have been derived, using a single modeling framework, where model parameters are the same in frequency and time domain. The modeling addresses the time dependent variability in the electrical behavior of MOSFETs, discussing the variability due to a single trap and the ensemble of traps. In the work here presented we detail the role of the observation window, in both time and frequency domain. We discuss how it impacts the variance of drain current (or threshold voltage) measured over time, and the number of observable traps in a given time window or frequency window. Besides analytical modeling, experimental results are presented and discussed.

在随机电报噪声 (RTN) 和低频噪声 (1/ f噪声)的背景下研究电荷俘获，旨在统一统计建模。1/ f 的分析公式噪声（频域）和 RTN（时域）已使用单一建模框架导出，其中模型参数在频域和时域中相同。该建模解决了 MOSFET 电气行为的时间相关可变性，讨论了由单个陷阱和陷阱集合引起的可变性。在这里介绍的工作中，我们详细介绍了观察窗口在时域和频域中的作用。我们讨论它如何影响随时间测量的漏极电流（或阈值电压）的变化，以及给定时间窗口或频率窗口中可观察到的陷阱数量。除了分析建模外，还介绍和讨论了实验结果。