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Hydrogen-Related Defects in Insulators
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-06-25 , DOI: 10.1002/pssa.202100213 Vladimir Kolkovsky 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-06-25 , DOI: 10.1002/pssa.202100213 Vladimir Kolkovsky 1
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It is shown that the introduction of hydrogen by a dc H plasma treatment leads to the appearance of negatively charged defects in amorphous Al2O3 and SiO2 and positively charged defects in amorphous HfO2. The concentration of the defects increases with increasing temperature of the dc H plasma treatment between 50 and 100 °C, and the defects appear in all samples independently on their growth conditions and the thickness of the insulators. The origin of the defects is discussed with an emphasis on the existence of interstitial hydrogen in the insulators.
中文翻译：
绝缘体中与氢有关的缺陷
结果表明，通过直流 H 等离子体处理引入氢会导致在非晶 Al 2 O 3和 SiO 2 中出现带负电的缺陷以及在非晶 HfO 2 中出现带正电的缺陷。缺陷的浓度随着 dc H 等离子体处理温度在 50 到 100 °C 之间增加而增加，并且缺陷出现在所有样品中，与其生长条件和绝缘体厚度无关。讨论了缺陷的起源，重点是绝缘体中间隙氢的存在。
更新日期：2021-06-25
中文翻译：
绝缘体中与氢有关的缺陷
结果表明，通过直流 H 等离子体处理引入氢会导致在非晶 Al 2 O 3和 SiO 2 中出现带负电的缺陷以及在非晶 HfO 2 中出现带正电的缺陷。缺陷的浓度随着 dc H 等离子体处理温度在 50 到 100 °C 之间增加而增加，并且缺陷出现在所有样品中，与其生长条件和绝缘体厚度无关。讨论了缺陷的起源，重点是绝缘体中间隙氢的存在。
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