We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

中文翻译：

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一种集成偏振转换器的精确表征方法

我们提出了一种偏振转换器的表征方法，它显着提高了传统表征方法的准确性。在 InP 硅膜 (IMOS) 平台上展示了​​该方法的实验演示。讨论了偏振转换器的设计和制造，以及模拟的偏振转换效率。显示仅 4 微米的器件可实现 97.5%±0.5% 的偏振转换，对应于 -16±0.9 dB 的消光比。传统的表征方法与新的4端口方法相比，精度从最高20%提高到0.5%。