Abstract—

Nanoparticle formation in silicon subsequently doped with Zn and О ions and annealed in vacuum is presented in this paper. Standard n-type Si plates with the (100) orientation, a thickness of 380 nm, and a diameter of 76 mm and grown by the Czochralski method are implanted with ⁶⁴Zn⁺ ions with a dose of 5 × 10¹⁶ cm^–2 and an energy of 50 keV and with ¹⁶О⁺ ions with a dose of 2 × 10¹⁷ cm^–2 and an energy of 20 keV. The ion current does not exceed 0.5 µA/cm² during implantation so that plate overheating in comparison to room temperature does not exceed 50°С. Then the plates were cut into samples with dimensions of 10 × 10 mm and annealed at a temperature of 400 to 900°С with a step of 100°С in vacuum for 30 min. It is discovered that, after implantation, an amorphized layer with a thickness of approximately 150 nm is formed in Si; amorphous Zn and O nanoparticles with dimensions of about 5 nm are formed in it. Radiation-induced defects are annealed during heat treatment, and the amorphized-layer thickness decreases. After annealing, a peak at a wavelength of 370 nm forms at 700°С in the photoluminescence spectrum; it is caused by the formation of ZnO-phase nanoparticles. This peak vanishes after annealing at 900°С, and a peak at a wavelength of 425 nm appears in the photoluminescence spectrum; it is due to the appearance of the Zn₂SiO₄ phase.

中文翻译：

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用锌和氧离子注入的硅中的纳米颗粒形成，随后在真空中退火

摘要——

本文介绍了在硅中形成纳米颗粒，随后掺杂 Zn 和 О 离子并在真空中退火。用直拉法生长的 (100) 取向、厚度为 380 nm、直径为 76 mm 的标准n型硅板注入^{64 个}Zn ⁺离子，剂量为 5 × 10 ¹⁶ cm ^–2和50 keV 的能量和^{16 个}О ⁺离子，剂量为 2 × 10 ¹⁷ cm ^–2和 20 keV 的能量。离子电流不超过 0.5 µA/cm ²在植入过程中，与室温相比，板过热不超过 50°С。然后将板切成尺寸为 10 × 10 mm 的样品，并在 400 至 900°С 的温度下以 100°С 的步骤在真空中退火 30 分钟。发现注入后，在Si中形成了约150nm厚的非晶化层；在其中形成尺寸约为 5 nm 的无定形 Zn 和 O 纳米颗粒。辐射诱导缺陷在热处理过程中被退火，非晶层厚度减小。退火后，在光致发光光谱的 700°С 处形成波长为 370 nm 的峰；它是由 ZnO 相纳米粒子的形成引起的。该峰在 900°С 退火后消失，在光致发光光谱中出现波长为 425 nm 的峰；₂ SiO ₄相。