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Nanoparticle Formation in Si Implanted with Zinc and Oxygen Ions With Subsequent Annealing in Vacuum
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques ( IF 0.5 ) Pub Date : 2021-06-25 , DOI: 10.1134/s1027451021030150
V. V. Privezentsev , A. N. Palagushkin , V. S. Kulikauskas , V. I. Zinenko , O. S. Zilova , A. A. Burmistrov , T. S. Il’ina , D. A. Kiselev , A. Yu. Trofonov , A. N. Tereshchenko

Abstract

Nanoparticle formation in silicon subsequently doped with Zn and О ions and annealed in vacuum is presented in this paper. Standard n-type Si plates with the (100) orientation, a thickness of 380 nm, and a diameter of 76 mm and grown by the Czochralski method are implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and with 16О+ ions with a dose of 2 × 1017 cm–2 and an energy of 20 keV. The ion current does not exceed 0.5 µA/cm2 during implantation so that plate overheating in comparison to room temperature does not exceed 50°С. Then the plates were cut into samples with dimensions of 10 × 10 mm and annealed at a temperature of 400 to 900°С with a step of 100°С in vacuum for 30 min. It is discovered that, after implantation, an amorphized layer with a thickness of approximately 150 nm is formed in Si; amorphous Zn and O nanoparticles with dimensions of about 5 nm are formed in it. Radiation-induced defects are annealed during heat treatment, and the amorphized-layer thickness decreases. After annealing, a peak at a wavelength of 370 nm forms at 700°С in the photoluminescence spectrum; it is caused by the formation of ZnO-phase nanoparticles. This peak vanishes after annealing at 900°С, and a peak at a wavelength of 425 nm appears in the photoluminescence spectrum; it is due to the appearance of the Zn2SiO4 phase.



中文翻译:

用锌和氧离子注入的硅中的纳米颗粒形成,随后在真空中退火

摘要——

本文介绍了在硅中形成纳米颗粒,随后掺杂 Zn 和 О 离子并在真空中退火。用直拉法生长的 (100) 取向、厚度为 380 nm、直径为 76 mm 的标准n型硅板注入64 个Zn +离子,剂量为 5 × 10 16 cm –2和50 keV 的能量和16 个О +离子,剂量为 2 × 10 17 cm –2和 20 keV 的能量。离子电流不超过 0.5 µA/cm 2在植入过程中,与室温相比,板过热不超过 50°С。然后将板切成尺寸为 10 × 10 mm 的样品,并在 400 至 900°С 的温度下以 100°С 的步骤在真空中退火 30 分钟。发现注入后,在Si中形成了约150nm厚的非晶化层;在其中形成尺寸约为 5 nm 的无定形 Zn 和 O 纳米颗粒。辐射诱导缺陷在热处理过程中被退火,非晶层厚度减小。退火后,在光致发光光谱的 700°С 处形成波长为 370 nm 的峰;它是由 ZnO 相纳米粒子的形成引起的。该峰在 900°С 退火后消失,在光致发光光谱中出现波长为 425 nm 的峰;2 SiO 4相。

更新日期:2021-06-25
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