We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same direction with the applied bias field was introduced to the absorption layer by adjusting the Al composition ratio between the p-type AlGaN layer and i-type AlGaN absorption layer. The polarization enhanced narrow-band PD exhibited a higher external quantum efficiency (EQE) of 82% than the conventional one with an EQE of 67%. Meanwhile, a low dark current density of 1.7 nA/cm2 and four orders of magnitude UV-visible rejection ratio were achieved for the enhanced narrow-band PDs with a maximum photocurrent responsivity of 202 mA/W at 304 nm.

中文翻译：

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具有偏振辅助功能的高量子效率窄带 UV-B AlGaN 引脚光电二极管


通过优化 AlGaN 层的 Al 成分和厚度，我们设计并制造了半峰全宽 (FWHM) 为 8 nm 的窄带 UV-B AlGaN pin 光电二极管 (PD)。为了提高窄带PD的光电响应，通过调整p型AlGaN层和i型AlGaN吸收层之间的Al成分比，向吸收层引入与施加偏置场方向相同的极化电场。层。偏振增强窄带PD的外量子效率(EQE)高达82%，而传统的EQE为67%。同时，增强型窄带PD实现了1.7 nA/cm2的低暗电流密度和四个数量级的紫外-可见光抑制比，在304 nm处的最大光电流响应率为202 mA/W。