Gold nanoparticles (AuNPs)-decorated reduced graphene oxide (rGO) is a compelling material from both aspects of processing and functionality. This paper presents an alternative method to prepare and alter the optoelectronic properties of the AuNPs-rGO hybrid film. Au was sputtered for a duration of 0–60 s on graphene oxide (GO) film before subjected to thermal reduction at 700^∘C. The surface of rGO was decorated by spherical AuNPs with a mean particle size of around 10nm due to the solid-state dewetting process. The surface plasmon resonance (SPR) of AuNPs around 550nm was intense when the Au sputter duration exceeded 20s. Remarkably, the AuNPs layer retarded the de-oxygenation of GO during thermal annealing. The AuNPs-rGO hybrid film with long-duration Au sputtering exhibited low optical constants and thicker rGO film. The AuNPs also played the role in lowering the bandgap, increasing the lattice disorder and assisting the high-energy photon absorption in the thermally reduced rGO film. The sample of 30s and 40s Au sputtering was optimum to obtain the lowest sheet resistance of 59kΩ/sq and 56kΩ/sq, respectively. The sheet resistance was bargained between de-oxygenation retardation and doping by the AuNPs. Both samples of 30 s and 40 s Au sputtering were having a unique and satisfyingly strong absorption band around 260nm, 350nm and 555nm corresponding to n−π* transition, π−π* transition and SPR of AuNPs, respectively. Such properties are desirable in several applications such as a transparent electrode and optoelectronic sensor.

中文翻译：

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金纳米粒子对热还原氧化石墨烯光电性能的影响

金纳米粒子 (AuNPs) 装饰的还原氧化石墨烯 (rGO) 在加工和功能两方面都是一种引人注目的材料。本文提出了一种制备和改变 AuNPs-rGO 杂化薄膜光电特性的替代方法。Au 在氧化石墨烯 (GO) 薄膜上溅射 0-60 s，然后在 700 ∘ C 下进行热还原^。rGO的表面由平均粒径约为 10 的球形 AuNPs 装饰nm 由于固态去润湿过程。AuNPs 的表面等离子共振 (SPR) 约为 550当 Au 溅射持续时间超过 20s。值得注意的是，AuNPs 层在热退火过程中延缓了 GO 的脱氧。具有长时间金溅射的 AuNPs-rGO 杂化薄膜表现出低光学常数和较厚的 rGO 薄膜。AuNPs还在降低带隙、增加晶格无序和帮助热还原的rGO薄膜中吸收高能光子方面发挥了作用。30个样本s 和 40s Au 溅射最适合获得 59 的最低薄层电阻ķΩ/sq 和 56ķΩ/平方，分别。薄层电阻在脱氧延迟和金纳米粒子掺杂之间进行了讨价还价。30 s 和 40 s Au 溅射样品都在 260 附近具有独特且令人满意的强吸收带纳米，350纳米和 555纳米对应n-π* 过渡，π-π* AuNPs 的跃迁和 SPR，分别。这种特性在透明电极和光电传感器等多种应用中是合乎需要的。