The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637mWcm⁻² and azimuthal angle of 0^o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

中文翻译：

---

通过光学整流硫掺杂对硒化镓单晶宽带太赫兹发射的影响

通过 oo-o 相位匹配的光学整流研究了硫掺杂对 GaSe 单晶中宽带太赫兹发射的影响。由 S 掺杂的 2.5 质量％ GaSe 产生的 THz 辐射的最大峰值比本征 GaSe 大 28.3％，泵注量为 637mWcm ^-2，方位角为 0 ^o。与本征和 S 掺杂的 7 质量％ GaSe 相比，S 掺杂 2.5 质量％ GaSe 中的太赫兹发射饱和度增加。结果表明，具有适当 S 掺杂浓度的 GaSe 可以有效改善宽带太赫兹辐射和饱和度。