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Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-06-23 , DOI: 10.35848/1882-0786/ac06ad
Gaofang Li 1, 2 , Renjie Huang 1 , Jingguo Huang 2 , Wenjie Zhang 3 , Haoyang Cui 1 , Nenghong Xia 1 , Zhiming Huang 2 , Junhao Chu 2 , Guohong Ma 3
Affiliation  

The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637mWcm−2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.



中文翻译:

通过光学整流硫掺杂对硒化镓单晶宽带太赫兹发射的影响

通过 oo-o 相位匹配的光学整流研究了硫掺杂对 GaSe 单晶中宽带太赫兹发射的影响。由 S 掺杂的 2.5 质量% GaSe 产生的 THz 辐射的最大峰值比本征 GaSe 大 28.3%,泵注量为 637mWcm -2,方位角为 0 o。与本征和 S 掺杂的 7 质量% GaSe 相比,S 掺杂 2.5 质量% GaSe 中的太赫兹发射饱和度增加。结果表明,具有适当 S 掺杂浓度的 GaSe 可以有效改善宽带太赫兹辐射和饱和度。

更新日期:2021-06-23
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