In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V₂O₅) thin films are deposited on glass substrate using spin coating route and annealed at 500°C. The Cu/La-V₂O₅/n-Si Schottky barrier diodes with different La concentrations have fabricated. Diffraction (XRD) characterization exposed the tetragonal crystal structure to La-V₂O₅ and pure V₂O₅ films. Field Emission Scanning Electron Microscopy (FE-SEM) morphology shows nanorod grain to La-V₂O₅ films. The decrease of optical gap (E_g) from 3.37 to 3.1 eV has been observed in UV-vis spectroscopy. The dc electrical conductivity is increased owing to the high-k-dielectric material influence of doping. Notably, La 4% doping exhibits high photo responsivity of 33.39 (mA/W) during fast switch response (ON-OFF).

在这项工作中，镧（La）掺杂五氧化二钒（V ₂ O ₅）薄膜的高k介电材料使用旋涂方法沉积在玻璃基板上，并在500°C下退火。制备了具有不同La浓度的Cu/La-V ₂ O ₅ /n-Si肖特基势垒二极管。衍射(XRD) 表征将四方晶体结构暴露于La-V ₂ O ₅和纯V ₂ O ₅薄膜。场发射扫描电子显微镜 (FE-SEM) 形态显示纳米棒晶粒到 La-V ₂ O ₅薄膜。光学间隙的减小（E _g) 从 3.37 到 3.1 eV 已在紫外可见光谱中观察到。由于掺杂的高 k 介电材料影响，直流电导率增加。值得注意的是，La 4% 掺杂在快速开关响应 (ON-OFF) 期间表现出 33.39 (mA/W) 的高光响应度。