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Monolayer-Thick GaN/AlN Multilayer Heterostructures for Deep-Ultraviolet Optoelectronics
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-23 , DOI: 10.1002/pssr.202100242
Valentin Jmerik 1 , Alexey Toropov 1 , Valery Davydov 1 , Sergey Ivanov 1
Affiliation  

Recent progress in the development of monolayer (ML)-thick GaN/AlN multilayer heterostructures for deep-ultraviolet (UV) optoelectronics is reviewed. Analysis of both plasma-assisted molecular beam epitaxy and metal–organic vapor phase epitaxy shows that extreme interface sharpness and sub-ML accuracy in setting the layer thickness are attractive features of the former, whereas the lowest density of threading dislocations and wide possibilities for the implementation of various 2D growth mechanisms are the advantages of the latter. The structural properties of ML GaN/AlN heterostructures are evaluated not only by standard X-ray diffraction and scanning transmission electron microscopy, but also by Raman spectroscopy. Theoretical and experimental studies of the optical properties of ML-thick GaN/AlN quantum wells (QWs) reveal that quenching of the quantum-confined Stark effect, suppression of transverse electric transverse magnetic polarization switching, as well as the excitonic nature of UV-radiative recombination in ultrathin (1–2 ML) QWs ensure in such structures a high internal quantum yield of 75% for UV radiation at 235 nm at room temperature. The possibilities of using ML-GaN/AlN heterostructures to fabricate UVC emitters of spontaneous and stimulated emissions in a wide range of output powers with various pumping techniques are considered, and the most important problems are formulated.

中文翻译:

用于深紫外光电子学的单层厚 GaN/AlN 多层异质结构

综述了用于深紫外 (UV) 光电子学的单层 (ML) 厚 GaN/AlN 多层异质结构的最新进展。对等离子体辅助分子束外延和金属-有机气相外延的分析表明,在设置层厚度方面具有极高的界面锐度和亚 ML 精度是前者的吸引人的特征,而穿透位错密度最低,并且具有广泛的可能性。实现各种二维生长机制是后者的优势。ML GaN/AlN 异质结构的结构特性不仅可以通过标准 X 射线衍射和扫描透射电子显微镜进行评估,还可以通过拉曼光谱进行评估。ML 厚 GaN/AlN 量子阱 (QW) 光学特性的理论和实验研究表明,量子限制斯塔克效应的猝灭、横向电横向磁极化切换的抑制以及紫外线辐射的激子性质超薄 (1–2 ML) QW 中的重组确保在这种结构中,室温下 235 nm 的紫外线辐射具有 75% 的高内量子产率。考虑了使用 ML-GaN/AlN 异质结构在各种泵浦技术下制造具有广泛输出功率的自发和受激发射的 UVC 发射器的可能性,并制定了最重要的问题。以及超薄 (1-2 ML) QW 中紫外线辐射复合的激子性质,确保在这种结构中,室温下 235 nm 的紫外线辐射具有 75% 的高内量子产率。考虑了使用 ML-GaN/AlN 异质结构在各种泵浦技术下制造具有广泛输出功率的自发和受激发射的 UVC 发射器的可能性,并制定了最重要的问题。以及超薄 (1-2 ML) QW 中紫外线辐射复合的激子性质,确保在这种结构中,室温下 235 nm 的紫外线辐射具有 75% 的高内量子产率。考虑了使用 ML-GaN/AlN 异质结构在各种泵浦技术下制造具有广泛输出功率的自发和受激发射的 UVC 发射器的可能性,并制定了最重要的问题。
更新日期:2021-06-23
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