Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice-Like Thin Film with Triple-Phase Transitions for Multilevel Phase-Change Memory,Physica Status Solidi-Rapid Research Letters

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Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice-Like Thin Film with Triple-Phase Transitions for Multilevel Phase-Change Memory
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-23 , DOI: 10.1002/pssr.202100222
Sicong Hua ₁ , Zhehao Xu ₁ , Xiao Su ₁ , Jiwei Zhai ₁ , Sannian Song ₂ , Zhitang Song ₂

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A multilevel phase-change memory cell that is based on a CrGeTe(CrGT)/HfGeSb(HfGS) superlattice-like (SLL) structure is proposed. With increasing temperature in resistance–temperature tests, the SLL thin films exhibit a three-step phase-change process that corresponds to the crystallization of Sb, GeTe, and CrGeTe. A stable and reversible three-step phase change is identified as the key characteristic for realizing multilevel storage. This so-designed multiple-crystallization SLL structure is a feasible way to increase the storage density.

中文翻译：

用于多级相变存储器的具有三相跃迁的 Cr7Ge33Te60/Hf16Ge6Sb78 类超晶格薄膜

提出了一种基于 CrGeTe(CrGT)/HfGeSb(HfGS) 类超晶格 (SLL) 结构的多级相变存储单元。随着电阻温度测试中温度的升高，SLL 薄膜表现出三步相变过程，对应于 Sb、GeTe 和 CrGeTe 的结晶。稳定且可逆的三步相变被确定为实现多级存储的关键特性。这种设计的多晶 SLL 结构是增加存储密度的可行方法。

更新日期：2021-08-15

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