Selectivity of TiOx-Based Electron-Selective Contacts on n-Type Crystalline Silicon and Solar Cell Efficiency Potential,Physica Status Solidi-Rapid Research Letters

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Selectivity of TiOx-Based Electron-Selective Contacts on n-Type Crystalline Silicon and Solar Cell Efficiency Potential
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-23 , DOI: 10.1002/pssr.202100246
Valeriya Titova ₁ , Jan Schmidt _{1,

2}

Affiliation

The selectivity parameter S₁₀ of titanium oxide (TiO_x)-based selective contacts on n-type silicon is experimentally extracted through measurements of the specific contact resistivity ρ_c and the recombination current density prefactor J₀, both parameters measured on fully Al-metallized samples. The contact resistivity ρ_c is determined applying the Cox and Strack method and the J₀ values are extracted using dynamic infrared lifetime mapping, allowing for contactless lifetime measurements on fully metallized silicon samples in contrast to conventionally applied lifetime measurement techniques. The highest selectivity after annealing of an n-Si/SiO_y/TiO_x/Al contact is determined to be S₁₀ = 11.6, which corresponds to a maximum achievable efficiency of 24.1% for this type of electron-selective contact. The maximum selectivity is achieved after low-temperature annealing at 500 °C or through a contact-firing step at a set-peak temperature of 820 °C in an industrial conveyor-belt furnace, as used in today's commercial solar cell production.

中文翻译：

基于 TiOx 的电子选择性接触对 n 型晶体硅的选择性和太阳能电池效率潜力

n 型硅上基于氧化钛 (TiO _x ) 的选择性接触的选择性参数S ₁₀是通过测量特定接触电阻率ρ _c和复合电流密度前因数J ₀实验提取的，这两个参数都是在完全金属化的铝上测量的样品。使用 Cox 和 Strack 方法和J ₀确定接触电阻率ρ _c值是使用动态红外寿命映射提取的，与传统应用的寿命测量技术相比，允许对完全金属化的硅样品进行非接触式寿命测量。n-Si/SiO _y /TiO _x /Al 触点退火后的最高选择性被确定为S ₁₀ = 11.6，这对应于此类电子选择性触点的最大可实现效率为 24.1%。最大的选择性是在 500 °C 的低温退火后或通过在工业传送带式炉中以 820 °C 的设定峰值温度进行接触烧制步骤后实现的，如当今商业太阳能电池生产中所使用的那样。

更新日期：2021-06-23

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